Chemical States Analysis of Trace-boron by using an Improved SEM-SXES
Chemical States Analysis of Trace-boron by using an Improved SEM-SXES
复制标题
使用改进的 SEM-SXES 进行痕量硼的化学态分析
DOI：
10.1017/s1431927616002920
复制
发表时间：
2016
影响因子：
2.8
通讯作者：
M. Koeda
中科院分区：
文献类型：
--
作者：
M. Terauchi;H. Takahashi;M. Takakura;T. Murano;M. Koike;T. Imazono;T. Nagano;H. Sasai;M. Koeda
X射线起源于从价带（成键电子态）到内壳层电子能级的电子跃迁，它告诉我们材料中元素的具体化学状态。这些X射线的能量范围从大约0.1到几keV，软X射线区域。因此，软X射线发射光谱（SXES）的基础上，电子显微镜（EM）可以是一个敏感的工具，元素和化学鉴定指定的标本领域。为此，用于SXES-EM的光栅光谱仪已被实现为在Al-L发射（73 eV）处具有0.2-0.3 eV的能量分辨率的商业仪器[1，2]。
X-rays originate form electronic transitions from valence bands (bonding electron states) to inner-shell electron levels inform us elementally specific chemical states in materials. The energies of those X-rays range from about 0.1 to a few keV, soft X-ray region. Thus, soft X-ray emission spectroscopy (SXES) based on electron microscopy (EM) can be a sensitive tool for elemental and chemical identifications of specified specimen areas. For that purpose, a grating spectrometer for SXES-EM has been realized as a commercial instrument with an energy resolution of 0.2-0.3 eV at Al-L emission (73 eV) [1,2].