Integrated injection logic in a high-speed SiGe bipolar technology
Integrated injection logic in a high-speed SiGe bipolar technology
复制标题
高速 SiGe 双极技术中的集成注入逻辑
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
R. Lachner
中科院分区：
文献类型：
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作者：
K. Aufinger;H. Knapp;S. Boguth;Oleksiy Gerasika;R. Lachner
一种用于集成注入逻辑（I2L）电路的器件以高速双极技术实现，而不对底层生产工艺进行任何改变。环形振荡器和分频器电路与这些设备建成，并进行了实验表征。每级电流约为25 µA时，栅极延迟为1 ns。
A device for integrated injection logic (I2L) circuits is implemented in a high speed bipolar technology without any changes to the underlying production process. Ring oscillator and frequency divider circuits are built with these devices and are experimentally characterized. A gate delay of 1 ns is obtained at a current of approximately 25 µA per stage.