Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor
Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor
复制标题
ZnO 纳米颗粒薄膜晶体管磁滞特性和分析
DOI：
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发表时间：
2013
影响因子：
2.4
通讯作者：
U. Hilleringmann
中科院分区：
文献类型：
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作者：
F. Vidor;G. Wirth;F. Assion;K. Wolff;U. Hilleringmann
在过去的几十年里，人们对柔性和透明电子器件的兴趣已经出现，并且ZnO基器件在这些技术中呈现出巨大的潜力。在这项研究中，ZnO纳米粒子被用来集成薄膜晶体管，而交联聚（4-乙烯基苯酚）（PVP）和PECVD-SiO $_{2}$被用作栅极介电层。遗憾的是，ZnO器件存在可靠性问题，例如老化和滞后。在这项研究中，在传递特性的滞后进行了实验研究。据观察，当使用聚合物电介质时，滞后方向受温度变化的影响。聚乙烯吡咯烷酮的体极化，在纳米粒子和聚合物介电界面处的陷阱，以及在纳米粒子的表面的氧分子的脱附，被归因为滞后行为的主要原因。
During the past few decades, the interest in flexible and transparent electronics has arisen, and ZnO-based devices present a great potential among these technologies. In this study, ZnO nanoparticles were used to integrate thin-film transistors, whereas cross-linked poly(4-vinylphenol) (PVP) and PECVD-SiO $_{2}$ were used as a gate dielectric layer. Unfortunately, there are reliability concerns in ZnO devices, such as aging and hysteresis. In this study, an experimental investigation of the hysteresis in the transfer characteristic is performed. It was observed that the hysteresis direction is affected by temperature variation when the polymeric dielectric is used. The PVP bulk polarization, the traps in nanoparticles and at the polymeric dielectric interface, as well as the desorption of oxygen molecules in the surface of the nanoparticles, were attributed as the main cause of the hysteretic behavior.