Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions
Low-temperature direct bonding of diamond (100) substrate on Si wafer under atmospheric conditions
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DOI：
10.1016/j.scriptamat.2020.09.006
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发表时间：
2021-01-15
影响因子：
6
通讯作者：
Higurashi, Eiji
中科院分区：
文献类型：
--
作者：
Matsumae, Takashi;Kurashima, Yuichi;Higurashi, Eiji
在大气条件下，在 250 摄氏度下实现了金刚石 (100) 基板和硅片的直接键合。在键合过程之前，用 H2SO4/H2O2 和 NH3/H2O2 混合物处理金刚石基底，而使用氧等离子体照射硅晶片。通过在退火过程中施加压力，除了污染区域之外，基板完全粘合。当施加 1.7 MPa 的剪切力时，粘合样品断裂。电子显微镜观察表明，金刚石和硅基底通过 3 nm 厚的 SiO2 层原子结合，金刚石结晶度没有明显损失。将金刚石 (100) 衬底集成到硅晶片上将有助于未来金刚石器件的制造。 (C) 2020 Acta Materialia Inc. 由 Elsevier Ltd 出版。保留所有权利。
Direct bonding of a diamond (100) substrate and a Si wafer was achieved at 250 degrees C under atmospheric conditions. Prior to the bonding process, the diamond substrate was treated with H2SO4/H2O2 and NH3/H2O2 mixtures, whereas the Si wafer was irradiated using oxygen plasma. By applying the pressure during the annealing process, the substrates were entirely bonded, except for the contaminated areas. The bonded specimen was fractured when a shear force of 1.7 MPa was applied. The electron microscopic observation indicated that the diamond and Si substrates were atomically bonded through a 3-nm-thick SiO2 layer without significant loss of diamond crystallinity. The integration of diamond (100) substrates on an Si wafer would contribute to the fabrication of future diamond devices. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.