Nano-structured oriented carbon films grown by PLD and CVD methods

Nano-structured oriented carbon films grown by PLD and CVD methods
复制标题

PLD和CVD方法生长的纳米结构取向碳膜

DOI:
10.1007/s00339-004-2862-0
复制
发表时间:
2004
期刊:
Applied Physics A
影响因子:
--
通讯作者:
P. Ascarelli
P. Ascarelli
中科院分区:
--
文献类型:
--
作者:
E. Cappelli;S. Orlando;G. Mattei;C. Scilletta;F. Corticelli;P. Ascarelli

文献摘要

被引文献

相似文献

PLD 和 CVD 方法(等离子体或偏压辅助)已用于制备纳米团簇石墨薄膜。实验条件(即沉积设备、基底温度、工作压力、惰性维持气体、母体物种和施加电压)已改变,最终目的是获得基面沿生长矢量定向并垂直于 n-Si<100> 基底的小石墨烯颗粒。在射频等离子体的辅助下,热解石墨靶材的脉冲激光烧蚀(Nd : YAG,二次谐波:λ=532 nm,hν=2.33 eV,τ=7 ns,ν=10 Hz,Φ≈7 J/cm2)在保持高基底温度和高惰性气体压力的情况下,在纳米结构形成方面给出了良好的结果。 CVD 方法在存在高基板温度和直流偏压的情况下,表现出良好的态度,可以通过氩/氢和甲烷的反应气流驱动石墨烯层和纳米线的纵向生长。通过扫描电子显微镜(SEM)对不同条件下生长的薄膜的形貌进行了表征。薄膜质量和纳米颗粒尺寸已通过拉曼光谱估计。
PLD and CVD methods, plasma or bias assisted, have been used to prepare thin films of nano-clustered graphite. The experimental conditions (vz. deposition apparatus, substrate temperature, working pressure, inert sustaining gases, parent species, and applied voltage) have been changed with the final aim of obtaining small graphene particles with the basal planes oriented along the growth vector and perpendicular to the n-Si<100> substrate. Pulsed laser ablation (Nd : YAG, 2nd harmonic: λ=532 nm, hν=2.33 eV, τ=7 ns, ν=10 Hz, Φ≈7 J/cm2), assisted by an RF-plasma, of a pyrolytic graphite target gave good results for nano-structure formation, provided high substrate temperature and high inert gas pressure are maintained. CVD methods, in the presence of high substrate temperature and a DC bias, showed a good attitude to drive a longitudinal growth of graphene layers and nano-wires from a reactive gas flow of Argon/Hydrogen and Methane. The morphology of the films grown at different conditions have been characterised by scanning electron microscopy (SEM). Film quality and nano-particle dimensions have been estimated by Raman spectroscopy.