Effects of hydrogen flow rate on the growth and field electron emission characteristics of diamond thin films synthesized through graphite etching

Effects of hydrogen flow rate on the growth and field electron emission characteristics of diamond thin films synthesized through graphite etching
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DOI:
10.1016/j.diamond.2007.02.005
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发表时间:
2007-08
影响因子:
4.1
通讯作者:
Xiaona Lu;Qiaoqin Yang;C. Xiao;A. Hirose
Xiaona Lu;Qiaoqin Yang;C. Xiao;A. Hirose
中科院分区:
材料科学2区
文献类型:
--
作者:
Xiaona Lu;Qiaoqin Yang;C. Xiao;A. Hirose

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