Colloidal III-V quantum dots: a synthetic perspective
Colloidal III-V quantum dots: a synthetic perspective
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胶体 III-V 量子点：合成视角
DOI：
10.1039/d2tc05234b
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发表时间：
2023
影响因子：
6.4
通讯作者：
Gazis T
中科院分区：
文献类型：
--
作者：
Gazis T
随着更严格的环境监管的到来，以镉、铅和其他重金属为基础的量子点已经成为人们憎恶的对象。III-V半导体是一种很有前途的替代材料，因为它们不仅与经典量子点系统的光电性能相当，而且确实超过了经典量子点系统的光电特性。尽管如此，III-V半导体并不是万能的。它们的严格合成是阻碍广泛采用的主要障碍。有几个团体已经迎接了这一综合挑战，导致了过多的出版物。在这种观点下，我们汇编了不同的获得III-V量子点的路线，并简明扼要地展示了它们，并为每种合成方法提供了相关的例子。这使我们能够找出这一领域的差距，我们在结论中强调了这一点。
With the advent of stricter environmental regulation, quantum dots based on cadmium, lead and other heavy metals have become anathema. III–V semiconductors constitute a promising alternative because they not only match but indeed surpass the optoelectronic properties of classical quantum dot systems. Despite this fact, III–V semiconductors are no panacea. Their exacting synthesis is a major hurdle hampering widespread adoption. Several groups have risen to this synthetic challenge, resulting in a plethora of publications. In this perspective, we compile the disparate routes to III–V quantum dots and concisely present them, with pertinent examples for each synthetic methodology. This has allowed us to identify gaps in the field, which we highlight as perspectives in the conclusion.