Bulk lifetime study of p-type Czochralski silicon with different processing history using quinhydrone-methanol surface passivation
Bulk lifetime study of p-type Czochralski silicon with different processing history using quinhydrone-methanol surface passivation
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使用醌氢醌-甲醇表面钝化对不同加工历史的 p 型直拉硅的整体寿命研究
DOI：
10.1109/pvsc48317.2022.9938829
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
U. Das
中科院分区：
文献类型：
--
作者：
T. Mouri;A. Upadhyaya;A. Rohatgi;W. Shafarman;U. Das
采用醌氢酮-甲醇（QH-MeOH）表面钝化方法，对不同热处理历史的p型织构Cz-Si晶片的体寿命进行了评估。通过有效载流子寿命（$\tau_{\text{eff}}$）和隐含电压（iVoc）量化的晶圆体质量取决于不同表面处理和钝化材料的热处理。观察到，在550°C下进行H2S反应的晶片表现出更高的$\tau_{\text{eff}}=235\ \mu\mathrm{s}$和$\text{iV}_{\text{oc}}=693\ \text{mV}$，这意味着H2S反应过程后的体质量有所改善。
The bulk lifetimes of p-type textured Cz-Si wafers with different thermal processing history were assessed using quinhydrone-methanol (QH-MeOH) surface passivation. The wafer bulk quality quantified by effective carrier lifetime ($\tau_{\text{eff}}$) and implied voltage (iVoc) depends on the thermal processing of different surface treatment and passivation materials. It was observed that wafers which had H2S reaction at 550°C demonstrated higher $\tau_{\text{eff}}=235\ \mu\mathrm{s}$ and $\text{iV}_{\text{oc}}=693\ \text{mV}$ implying bulk quality improvement after the H2S reaction process.