High-speed epitaxial growth of Y3Fe5O12 thick film with high magnetization on (4 2 0) Y3Al5O12 substrate using metal-organic chemical vapor deposition
High-speed epitaxial growth of Y3Fe5O12 thick film with high magnetization on (4 2 0) Y3Al5O12 substrate using metal-organic chemical vapor deposition
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DOI：
10.1016/j.matlet.2020.128228
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发表时间：
2020-10
影响因子：
3
通讯作者：
Honoka Aida;R. Watanuki;A. Ito
中科院分区：
文献类型：
--
作者：
Honoka Aida;R. Watanuki;A. Ito
采用金属有机化学气相沉积（MOCVD）技术，在（4 2 0）Y3 Al 5 O 12衬底上高速外延生长了（4 2 0）取向的Y3 Fe 5 O 12（YIG）厚膜，沉积速率高达33 μm h− 1.外延YIG厚膜表现出202 emu cm-3的高饱和磁化强度，这大于单晶的报道值。X射线光电子能谱表明，高磁化强度与石榴石结构中Fe离子的还原态有关。
High-speed epitaxial growth of a (4 2 0)-oriented Y3Fe5O12(YIG) thick film on (4 2 0) Y3Al5O12substrate was demonstrated with a high deposition rate of 33 μm h−1using metal-organic chemical vapor deposition. The epitaxial YIG thick film exhibited a high saturation magnetization of 202 emu cm−3, which was greater than the value reported for a single crystal. X-ray photoelectron spectroscopy implies that the high magnetization was associated with a reduced state of Fe ion in the garnet structure.