Polarity control of InN grown by MOVPE on sapphire (0001)
Polarity control of InN grown by MOVPE on sapphire (0001)
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MOVPE 在蓝宝石 (0001) 上生长的 InN 的极性控制
DOI：
10.1002/pssc.200674744
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
A. Yamamoto
中科院分区：
文献类型：
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作者：
Wenjun Wang;K. Sugita;Y. Nagai;Y. Houchin;A. Hashimoto;A. Yamamoto
研究了MOVPE InN在蓝宝石（0001）上的极性控制。通过控制衬底氮化工艺和/或LT-GaN缓冲退火工艺，采用MOVPE技术在蓝宝石衬底上制备了两种极性的InN薄膜。氮化蓝宝石的表面是决定InN膜极性的关键因素。在1000 ° C氮化衬底上生长N极性InN薄膜，而在900 ° C氮化衬底上生长In极性InN薄膜。在用LT-GaN缓冲层生长InN的情况下，缓冲层退火是确定InN膜极性的关键问题。分别在长时间退火缓冲层和短时间退火缓冲层上获得了N极性和In极性的InN薄膜。（© 2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Polarity control of MOVPE InN on sapphire (0001) was investigated. Two kinds of polarity InN films on sapphire substrate by MOVPE have been prepared by controlling the substrate nitridation process and/or the LT-GaN buffer annealing process. Surface of the nitrided sapphire is a crucial factor in determining the polarity of InN film. N-polarity InN film was grown on the 1000 °C-nitrided substrate without LT-GaN buffer; while In-polarity InN film was grown on the 900 °C-nitrided substrate. In the case of InN growth with a LT-GaN buffer, buffer annealing is a crucial issue in determining the polarity of InN film. N- and In-polarity InN films were obtained on the long-time-annealed buffer and the short-time-annealed buffer, respectively. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)