High mobility thin film transistors with transparent ZnO channels
High mobility thin film transistors with transparent ZnO channels
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DOI：
10.1143/jjap.42.l347
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发表时间：
2003-04-01
期刊：
影响因子：
--
通讯作者：
Kawasaki, M
中科院分区：
文献类型：
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作者：
Nishii, J;Hossain, FM;Kawasaki, M
我们利用CaHfOx，在氧化锌沟道和非晶氮化硅栅绝缘层之间的缓冲层，制备了高性能的氧化锌薄膜晶体管(TFT)。除了沟道层和缓冲层替代a-Si之外，TFT的结构、尺寸和材料组与有源矩阵液晶显示器中的商用非晶硅(a-Si)TFT的结构、尺寸和材料组相同。对于最高工艺温度为300℃的器件，场效应迁移率可高达7 cm(2)·V-1.s(-1)。加工温度可降低到150℃，而性能不会有太大的下降，显示了使用聚合物基板的可能性。
We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to, those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm(2).V-1.s(-1) for devices with maximum process temperature of 300degreesC. The process temperature can be reduced to 150degreesC without much degrading the performance, showing the possibility of the use of polymer substrate.