Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications
Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications
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用于体雪崩光电探测器应用的 InAs 量子点中增强的载流子倍增
DOI：
10.1002/adom.201601023
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发表时间：
2017-05-03
影响因子：
9
通讯作者：
Fang, Jia-Xiong
中科院分区：
文献类型：
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作者：
Ma, Ying-Jie;Zhang, Yong-Gang;Fang, Jia-Xiong
探索利用新型纳米结构提高雪崩光电二极管（APD）性能的潜力对于克服雪崩概率的瓶颈具有很大的吸引力。这项工作首次证明了GaAs APD结构中InAs量子点（QD）的碰撞电离导致的电子引发光电流的倍增增强。在77-300 K的温度范围内，集成到单独的吸收、电荷和倍增GaAs homo APD中的五层堆叠的2.25 ML InAs QD/50 nm GaAs间隔物倍增结构，与没有QD的参考器件相比，倍增因子高达6倍。此外，还观察到与硅非常接近的极低的过量噪声因子，有效k eff因子低于0.1。这个演示是基本的兴趣和相关的未来超高效雪崩探测器的应用。
Exploring the potentiality of enhancing the performance of avalanche photodiodes (APDs) using novel nanoscale structures is highly attractive for overcoming the bottleneck of avalanche probability. This work demonstrates, for the first time, multiplication enhancement of electron‐initiated photocurrent due to impact ionization in InAs quantum dots (QDs) within a GaAs APD structure. A five‐layer stacked 2.25 MLs InAs QD/50 nm GaAs spacer multiplication structure integrated into a separated absorption, charge, and multiplication GaAs homo APD results in up to six times higher multiplication factors in comparison to a reference device without QD over a temperature range of 77–300 K. In addition, extremely low excess noise factor in close proximity to that of silicon is also observed with an effective k eff factor below 0.1. This demonstration is of fundamental interest and relevant for future ultra efficient avalanche detector applications.