Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition
Low temperature growth of (AlGa)2O3 films by oxygen radical assisted pulsed laser deposition
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DOI：
10.1039/c9ce01541h
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发表时间：
2020
期刊：
影响因子：
3.1
通讯作者：
Fabi Zhang;Congyu Hu;M. Arita;Katsuhiko Saito;Tooru Tanaka;Q. Guo
中科院分区：
文献类型：
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作者：
Fabi Zhang;Congyu Hu;M. Arita;Katsuhiko Saito;Tooru Tanaka;Q. Guo
采用氧自由基辅助脉冲激光沉积技术实现了β-（AlGa）2 O3薄膜的低温生长。所制备的薄膜显示出良好的（-201）垂直于（0001）蓝宝石衬底的取向，即使在沉积温度低至200 °C。系统地研究了衬底温度对薄膜结构和光学性能的影响。在100 - 500 °C的衬底温度下生长的所有薄膜在紫外和可见光范围内都表现出超过90%的高透射率。对于在高于100 °C的衬底温度下沉积的膜，已经观察到带隙值的突变，这与由X射线衍射证明的非晶到结晶转变温度一致。薄膜厚度随衬底温度的下降速度慢得多的（AlGa）2 O3薄膜生长与氧自由基的援助，表明抑制挥发性物质的蒸发与氧自由基的帮助。低温生长的β-（AlGa）2 O3薄膜可以与半导体微加工工艺的现有光刻兼容。
Low temperature growth of β-(AlGa)2O3 films has been realized by oxygen radical assisted pulsed laser deposition. The prepared films show a good (−201) orientation perpendicular to (0001) sapphire substrates even at a deposition temperature as low as 200 °C. The influences of the substrate temperature on the structural and optical properties of the films have been systematically investigated. All the films grown at substrate temperatures from 100 to 500 °C exhibit a high transmittance of over 90% in the ultraviolet and visible range. Abrupt bandgap value variation has been observed for films deposited at substrate temperatures higher than 100 °C, which agrees with the amorphous to crystalline transition temperature evidenced by X-ray diffraction. The speed of the film thickness decrease with substrate temperature is much slower for (AlGa)2O3 films grown with oxygen radical assistance, indicating the suppression of the evaporation of volatile species with the help of oxygen radical species. The low temperature growth of β-(AlGa)2O3 films could be compatible with the established lithography of semiconductor microfabrication processes.