Defect structure studies of bulk and nano-indium-tin oxide
Defect structure studies of bulk and nano-indium-tin oxide
复制标题
DOI：
10.1063/1.1783610
复制
发表时间：
2004-10-01
影响因子：
3.2
通讯作者：
Jorgensen, JD
中科院分区：
文献类型：
--
作者：
González, GB;Mason, TO;Jorgensen, JD
采用高分辨同步辐射x射线衍射、扩展x射线吸收精细结构和中子飞行时间衍射等实验技术研究了块状和纳米氧化铟锡的缺陷结构。结构结果包括原子位置，阳离子分布，和氧间隙人口的氧化和还原材料。这些结构参数与理论计算和原位电导率和热电势测量以及现有缺陷模型相关，特别参考Frank和Kostlin [G.弗兰克和H. Kostlin，Appl.Phys.A27，197（1982）]。(C)2004年，美国物理学会。
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experimental techniques, including high-resolution synchrotron x-ray diffraction, extended x-ray absorption fine structure, and time-of-flight neutron diffraction on powder specimens. The structural results include atomic positions, cation distributions, and oxygen interstitial populations for oxidized and reduced materials. These structural parameters were correlated with theoretical calculations and in situ electrical conductivity and thermopower measurements as well as existing defect models, with special reference to the model of Frank and Kostlin [G. Frank and H. Kostlin, Appl. Phys. A 27, 197 (1982)]. (C) 2004 American Institute of Physics.