p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy
p‐type CdTe epilayers grown by photoassisted molecular beam epitaxy
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光辅助分子束外延生长p型CdTe外延层
DOI：
10.1063/1.97231
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
J. Schetzina
中科院分区：
文献类型：
--
作者：
R. Bicknell;N. Giles;J. Schetzina
我们报告的第一个成功的替代掺杂的碲化镉薄膜与锑。这些p型外延层是使用一种新技术，光辅助分子束外延，其中在薄膜沉积过程中照射衬底制备的。发现照明在CdTe：Sb膜的电学性质中产生立即和有利的变化，使得产生高度活化的p型层。碲化镉：锑薄膜生长在类似的条件下，但在没有照明，被发现是绝缘的。
We report the first successful substitutional doping of CdTe films with antimony. These p‐type epilayers were prepared using a new technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. Illumination was found to produce immediate and favorable changes in the electrical properties of the CdTe:Sb films such that highly activated p‐type layers resulted. CdTe:Sb films grown under similar conditions, but in the absence of illumination, were found to be insulating.