Nonisothermal Synthesis of AB-Stacked Bilayer Graphene on Cu Foils by Atmospheric Pressure Chemical Vapor Deposition
Nonisothermal Synthesis of AB-Stacked Bilayer Graphene on Cu Foils by Atmospheric Pressure Chemical Vapor Deposition
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DOI：
10.1021/jp5030735
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发表时间：
2014-06
影响因子：
3.7
通讯作者：
Haibin Sun;Jun Wu;Yan Han;Junyong Wang;F. Song;J. Wan
中科院分区：
文献类型：
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作者：
Haibin Sun;Jun Wu;Yan Han;Junyong Wang;F. Song;J. Wan
自从发现铜催化化学气相沉积（CVD）以来，大面积石墨烯薄膜的制备一直是通过在等温条件下碳前驱体暴露来进行的。在这项工作中，我们报告了一种通过常压 CVD 在铜箔上快速合成大面积 AB 堆叠双层石墨烯薄膜（BGF）的非等温方法。通过扫描电子显微镜、拉曼光谱和透射电子显微镜仔细研究了 BGF 的生长特征。结果表明，冷却速率和CH4流量对非等温过程中BGF的生长起着至关重要的作用。 BGF 制备的相图是通过大量实验得出的。此外，我们发现双层石墨烯种子在生长初始阶段生长成石墨烯岛，并逐渐延伸成连续膜。因此，提出了一种结合表面催化过程和种子生长的可能的生长机制。
Since the discovery of Cu-catalyzed chemical vapor deposition (CVD), the preparation of large-area graphene films has been performed by the carbon precursor exposure under isothermal conditions. In this work, we report on a nonisothermal method to quickly synthesize the large-area AB-stacked bilayer graphene films (BGF) by atmospheric pressure CVD on the copper foils. The growth feature of the BGF is carefully studied by scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. The results show that both cooling rate and CH4 flow rate play crucial roles on the BGF growth in the nonisothermal process. A phase diagram for the preparation of BGF is thereby derived from plenty of experiments. In addition, we find that bilayer graphene seeds grow into graphene islands at the initial growth stage and extend gradually to a continuous film. Accordingly, a possible growth mechanism combining with surface-catalyzed process and seed growth is proposed.