Tunnel diode with asymmetric spacer layers for use as microwave detector
Tunnel diode with asymmetric spacer layers for use as microwave detector
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具有不对称间隔层的隧道二极管，用作微波检测器
DOI：
10.1049/el:19911356
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发表时间：
1991
影响因子：
1.1
通讯作者：
I. Dale
中科院分区：
文献类型：
--
作者：
R. T. Syme;M. Kelly;R. Smith;A. Condie;I. Dale
设计并制作了一种新型的单势垒、带内非对称间隔层隧道二极管。结构的不对称性导致不对称的电流-电压特性，使得二极管适合用作零偏置微波探测器。9.375 GHz的电压灵敏度显示出较弱的温度依赖性（在− 40° -+ 80°C范围内的变化通常小于1 dB，而零偏置肖特基二极管的变化为3 dB）。最大微波功率处理也上级锗背二极管（1 dB滚降通常为+10 dBm，而Ge背二极管为-10 dBm），与零偏置肖特基二极管相似。
A novel single-barrier, intraband tunnel diodes with asymmetric spacer layers has been designed and fabricated. The structural asymmetry leads to asymmetric current-voltage characteristics and makes the diodes suitable for use as zero-bias microwave detectors. The voltage sensitivity as 9.375 GHz shows a weak temperature dependence (typically less than 1 dB variation over − 40° –+ 80°C, compared with 3 dB for a zero-bias Schottky diode). The maximum microwave power handling is also superior to a germanium back diode (1 dB rolloff typically at + 10 dBm compared with –10 dBm for the Ge back diode) and similar to a zero-bias Schottky diode.