Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device.
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device.
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DOI：
10.1021/acs.nanolett.9b02774
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发表时间：
2019-06
期刊：
影响因子：
10.8
通讯作者：
M. Widmann;Matthias Niethammer;D. Fedyanin;I. A. Khramtsov;T. Rendler;I. Booker;J. Ul Hassan;N. Mori
中科院分区：
文献类型：
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作者：
M. Widmann;Matthias Niethammer;D. Fedyanin;I. A. Khramtsov;T. Rendler;I. Booker;J. Ul Hassan;N. Mori
具有长寿命自旋的色心是量子传感和量子信息应用的既定平台。色心存在于不同的电荷状态中，它们中的每一个具有不同的光学和自旋性质。量子技术的应用需要能够访问和稳定每个特定任务的电荷状态。在这里，我们研究了碳化硅中单个硅空位的电荷态操纵，该系统最近表现出长自旋相干时间和超稳定自旋选择光学跃迁的独特组合。特别是，我们证明了电荷状态切换通过施加到色心的偏置在一个集成的碳化硅光电器件。我们表明，所定义的掺杂分布和其他缺陷在设备中的分布的电子环境中起着关键作用的电荷状态控制。我们的实验结果和数值模拟的证据表明，控制这些复杂的相互作用，在一定条件下，提高光子发射率。这些发现开辟了确定性控制量子技术的自旋活性色心的电荷状态的方式，并提供了新的技术，用于监测掺杂分布和电压传感的微观器件。
Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the color center in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modelling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active color centers for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.