Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication
Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication
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DOI：
10.1002/pssc.200564110
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发表时间：
2006-03
期刊：
影响因子：
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通讯作者：
K. Yamashita;M. Yoshimoto;K. Oe
中科院分区：
文献类型：
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作者：
K. Yamashita;M. Yoshimoto;K. Oe
我们研究了GaAs1-xBix合金的折射率色散，这是一种很有前途的温度不敏感激光二极管材料。随着GaBi摩尔分数x的增加，GaAs1-xBix合金的折射率谱向长波方向移动。在x较大的样品中，折射率谱的能量漂移变小。引入摩尔分数为2.6%的GaBI，使薄膜的热光系数降低到GaAs的1/3。研究结果表明，含铋合金有望成为激光波长不敏感的分布式反馈激光器。(2006 Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We have investigated refractive index dispersion of GaAs1–xBix alloys, which are promising materials for temperature-insensitive laser diodes. With increasing the GaBi mole fraction x , the refractive index spectrum of the GaAs1–xBix alloy showed a spectral shift toward the longer wavelength side. The energy shift of the index spectrum becomes small in a sample with larger x . The thermo-optic coefficient was reduced to one third of that for GaAs by introducing GaBi of 2.6% in mole fraction. The results obtained here imply that the Bi-containing alloys are promising for distributed feedback laser diodes with temperature-insensitive lasing wavelength. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)