Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
复制标题
InAlN/GaN HEMT 中的肖特基接触技术可提高击穿电压
DOI：
10.1109/ted.2013.2241439
复制
发表时间：
2013-03-01
影响因子：
3.1
通讯作者：
Chen, Kevin J.
中科院分区：
文献类型：
--
作者：
Zhou, Qi;Chen, Wanjun;Chen, Kevin J.
在本文中，我们展示了一种新的肖特基接触技术，使晶格匹配的In0.17Al0.83N/GaN高电子迁移率晶体管(HEMTs)的关态击穿电压(BV)提高了253%。基于这一概念，提出了肖特基源漏和肖特基源极InAlN/GaN HEMT。所提出的L-GD为15微米的InAlN/GaN HEMT的三端BV大于600V，而相同尺寸的传统InAlN/GaN HEMT的最大BV为184V。在不使用任何场板的情况下，在L-GD=15微米的SS InAlN/GaN HEMT中测量到了650V的BV，这是迄今为止在InAlN/gan HEMT上实现的最高BV。相应的比导通电阻(R-Sp，R-On)低至3.4mOmega。Cm(2)。在L-GD=1微米的SS InAlN/GaN HEMT中也获得了118V的BV，这是具有如此短的带有GaN缓冲器的L-GD的GaN基HEMT中最高的BV。BV的改善依赖于在SS下有效地抑制源载流子注入到GaN缓冲器中，这是由于在肖特基金属化过程中金属表面的光滑和金属尖峰的消除。
In this paper, we demonstrate a 253% improvement in the OFF-state breakdown voltage (BV) of the lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-contact technology. Based on this concept, the Schottky-source/drain and Schottky-source (SS) InAlN/GaN HEMTs are proposed. The proposed InAlN/GaN HEMTs with an L-GD of 15 mu m showed a three-terminal BV of more than 600 V, while the conventional InAlN/GaN HEMTs of the same geometry showed a maximum BV of 184 V. Without using any field plate, the BV of 650 V was measured in the SS InAlN/GaN HEMTs with L-GD = 15 mu m, which is the highest BV ever achieved on InAlN/GaN HEMT. The corresponding specific on-resistance (R-sp,R-on) is as low as 3.4 m Omega . cm(2). A BV of 118 V was also obtained in SS InAlN/GaN HEMTs with L-GD = 1 mu m, which is the highest BV in GaN-based HEMTs featuring such a short L-GD with GaN buffer. The improvement of the BV relies on the effective suppression of source carrier injection into the GaN buffer under the SS due to the smooth metal morphology and elimination of metal spikes in the Schottky metallization.