Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism
Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism
复制标题
CdTe 在邻位 CdTe(100) 表面上的同质外延生长：反应动力学和机制
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
P. Sides
中科院分区：
文献类型：
--
作者：
K. Yong;H. Martínez;A. Gellman;P. Sides
以Cd（CH 3）2和Te（C3 H7）2为前驱体，在H2气氛下，在CdTe（100）邻面上生长了CdTe同质外延薄膜。邻位CdTe（100）衬底从（100）方向向（111）Te方向的取向差为0°、2°、4°、6°和8°，因此具有系统地增加的台阶密度。在这些表面上生长的CdTe薄膜是单晶和外延的，但总的表面形貌取决于衬底的取向差。在CdTe（100）-0°和CdTe（100）-8°衬底上生长的薄膜比较粗糙，而在CdTe（100）-4°衬底上生长的薄膜比较光滑。薄膜生长的动力学进行了研究，通过测量的整体薄膜的生长速率和测量的前体吸附/脱附动力学。薄膜的生长速率弱依赖于基板的取向差的程度，增加步骤密度略有增加。虽然台阶密度决定了薄膜的形貌，但台阶不是薄膜分解的活性部位。
Homoepitaxial films of CdTe were grown on vicinal CdTe(100) surfaces using Cd(CH3)2 and Te(C3H7)2 precursors in an atmosphere of H2. The vicinal CdTe(100) substrates were misoriented by 0°, 2°, 4°, 6°, and 8° from the (100) direction towards the (111)Te direction and thus had systematically increasing step densities. The CdTe films grown on these surfaces were single crystalline and epitaxial but had gross surface morphologies that depended on the misorientation of the substrate. Films grown on the CdTe(100)-0° and CdTe(100)-8° substrates were rough while those grown on the CdTe(100)-4° substrate were smooth. The kinetics of film growth were studied through measurements of the overall film growth rates and measurements of precursor adsorption/desorption kinetics. Film growth rates were weakly dependent on the degree of substrate misorientation, increasing slightly with increasing step density. Although the step density determines film morphology, the steps are not active sites for decomposition of precurs...