Charge Oscillations in Bilayer Graphene Quantum Confinement Devices
Charge Oscillations in Bilayer Graphene Quantum Confinement Devices
复制标题
双层石墨烯量子限制器件中的电荷振荡
DOI：
10.1021/acs.nanolett.3c02253
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发表时间：
2023
期刊：
影响因子：
10.8
通讯作者：
Zhu, Jun
中科院分区：
文献类型：
--
作者：
Fu, Hailong;Huang, Ke;Watanabe, Kenji;Taniguchi, Takashi;Zhu, Jun
量子约束结构是基础物理探索和技术应用中量子器件的基石。在这项工作中，我们采用两种不同的门控策略制作了双门控双层石墨烯法布里- p<s:1>量子霍尔干涉仪，并进行了有限元模拟，以了解约束结构的静电特性，并指导器件的设计和制造。我们观察到在干涉仪内部形成的量子点电荷引起的两种类型的电阻振荡。我们通过测量振荡对磁场、栅极电压和直流偏置的依赖性来获得点的大小、位置和充电能量。我们分析和讨论了量子点的起源及其对量子霍尔边缘态后向散射和干涉的影响。在这些研究中获得的见解揭示了范德华量子约束装置的构造。
Quantum confinement structures are building blocks of quantum devices in fundamental physics exploration and technological applications. In this work, we fabricate dual-gated bilayer graphene Fabry–Pérot quantum Hall interferometers employing two different gating strategies and conduct finite element simulations to understand the electrostatics of the confinement structures and to guide device design and fabrication. We observe two types of resistance oscillations arising from the charging of quantum dots formed inside the interferometers. We obtain the size, location, and charging energy of the dots by measuring the dependence of the oscillations on the magnetic field, gate voltages, and dc bias. We analyze and discuss the origin of the quantum dots and their impact on quantum Hall edge state backscattering and interference. Insights gained in these studies shed light on the construction of van der Waals quantum confinement devices.