Sulfur passivation for ohmic contact formation to InAs nanowires
Sulfur passivation for ohmic contact formation to InAs nanowires
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DOI：
10.1088/0957-4484/18/10/105307
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发表时间：
2007-03-14
期刊：
影响因子：
3.5
通讯作者：
Samuelson, L.
中科院分区：
文献类型：
--
作者：
Suyatin, D. B.;Thelander, C.;Samuelson, L.
我们研究了在多硫化铵（NH 4）（2）S-x水溶液中通过化学腐蚀和钝化接触区来形成与InAs纳米线的欧姆接触。在接触金属蒸发之前，将纳米线暴露于不同稀释水平的（NH 4）（2）Sx溶液。发现基于高度稀释的（NH 4）S-2（x）溶液的工艺是自终止的，具有最小的InAs蚀刻。的接触的稳定性进行了研究与电气测量作为在真空和空气中的存储时间的函数。
We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivation of the contact areas in an ammonium polysulfide, (NH4)(2)S-x, water solution. The nanowires were exposed to different dilution levels of the (NH4)(2)Sx solution before contact metal evaporation. A process based on a highly diluted ( NH4)S-2(x) solution was found to be self-terminating, with minimal etching of the InAs. The stability of the contacts was investigated with electrical measurements as a function of storage time in vacuum and air.