A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage
A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage
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一种具有固有反向导通能力和千伏击穿电压的新型GaN垂直结场效应晶体管
DOI：
10.1088/1361-6641/abcd15
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发表时间：
2020-11
影响因子：
1.9
通讯作者：
Bo Zhang
中科院分区：
文献类型：
--
作者：
Kuangli Chen;Qi Zhou;Liyang Zhu;Zhiwen Dong;Peng Huang;Chao Deng;Yonglian Cai;Wei Gao;Chunhua Zhou;Wanjun Chen;Bo Zhang
本文提出了一种新型的具有本征反向导通能力的GaN垂直结场效应晶体管（RC-JFET），并对其进行了模拟研究。RC-JFET具有两个独立的源极电极，其中一个用作嵌入式续流二极管，可以实现器件的反向导通功能。受益于具有两个分离的源极电极的结构，正向和反向电流传导路径也被分离，这允许我们独立地设计RC-JFET的正向和反向传导特性。正向阈值电压VTH为1.6 V，反向开启电压Von，rev低至0.7 V。此外，埋入浮置p基区可以有效地调制GaN漂移区的电场，可以实现1720 V的高击穿电压，Ron，sp为2.79 mΩ cm 2。由于嵌入式续流二极管，该器件具有13 ns的短反向恢复时间T rr。通过具有固有的反向导通能力，所提出的RC-JFET能够消除外部连接的二极管，这有利于改善开关速度和开关功率损耗，由于减少寄生效应和功率电路的芯片尺寸。
In this work, a novel GaN vertical junction field-effect transistor (JFET) with intrinsic reverse conduction capability (RC-JFET) is proposed and studied by simulation. The RC-JFET features two separate source electrodes, one of which performs as an embedded freewheeling diode that can enable the reverse conduction function of the device. Benefiting from a structure with two separate source electrodes, the forward and reverse current conduction paths are also separated, which allows us to independently design the forward and reverse conduction characteristics of the RC-JFET. The forward threshold voltage V TH is 1.6 V while the reverse turn-on voltage V on,rev is as low as 0.7 V. In addition, the buried floating p-base can effectively modulate the E-field in the GaN drift region, which can achieve a high breakdown voltage of 1720 V with an R on,sp of 2.79 mΩ cm2. Due to the embedded freewheeling diode, the device exhibits a short reverse recovery time T rr of 13 ns. By featuring an intrinsic reverse conduction capability, the proposed RC-JFET is capable of eliminating the externally connected diode, which is beneficial for improved switching speed and switching power loss due to the reduction of parasitic effects and chip size of power circuits.