Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots
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DOI：
10.1063/1.1675923
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发表时间：
2004-03
影响因子：
4
通讯作者：
P. Jayavel;Hirokazu Tanaka;T. Kita;O. Wada;H. Ebe;M. Sugawara;J. Tatebayashi;Y. Arakawa;Y. Nakata;T. Akiyama
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文献类型：
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作者：
P. Jayavel;Hirokazu Tanaka;T. Kita;O. Wada;H. Ebe;M. Sugawara;J. Tatebayashi;Y. Arakawa;Y. Nakata;T. Akiyama
研究了InAs/GaAs自组装量子点解理边光致发光(PL)的偏振特性。分析了具有8 nm InxGa1−xAs覆盖层的In(In)组分x=0和0.13的点的横电(TE)模和横磁(TM)模的发光强度。偏振结果表明，随着覆盖层组成的变化，x=0的点的荧光以TE模为主，x=0.13的点的光以TM模为主。这种偏振变化归因于使用透射电子显微镜图像的网点形状的变化。这些结果表明，可以通过控制组成中的盖层来控制量子点的光学偏振各向异性。
We have studied the polarization properties of cleaved-edge photoluminescence (PL) from InAs/GaAs self-assembled quantum dots. Transverse-electric (TE) and transverse-magnetic (TM) mode PL intensities have been analyzed for the dots having 8 nm InxGa1−xAs capping layer with indium (In) composition of x=0 and 0.13. Polarization results show a dramatic change with the capping layer In compositions; TE-mode dominant PL is observed for dots with x=0, on the other hand, TM-mode dominant PL for dots with x=0.13. This polarization change has been attributed to the dot shape change using transmission electron microscopy images. These results suggest that the optical polarization anisotropy of the quantum dots can be controlled by manipulating the capping layer In composition.