Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K

Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K
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使用高达 77 K 的二维空穴气体对 InAs/GaAs 量子点中的多粒子空穴态进行时间分辨检测

DOI:
10.1002/pssc.201100218
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发表时间:
2012
期刊:
Physica Status Solidi (c)
影响因子:
--
通讯作者:
M. Geller
M. Geller
中科院分区:
--
文献类型:
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作者:
T. Nowozin;A. Marent;D. Bimberg;A. Beckel;B. Marquardt;A. Lorke;M. Geller

文献摘要

被引文献

相似文献

我们演示了在自组织InAs/GaAs量子点(QD)中使用相邻的二维空穴气(2DHG)作为检测器检测温度高达77 K的多粒子空穴态。2DHG中的电容-电压(C-V)测量以及时间分辨电流测量解析了与QD系综中的多粒子空穴态相关的六个不同峰的结构。提取每个单个多粒子空穴态的捕获和发射过程的时间常数,并识别潜在的发射过程。一个等效电路模型产生的栅极电压依赖杠杆臂和多粒子空穴态的能级分裂。(© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA,魏因海姆)
We demonstrate the detection of many‐particle hole states in self‐organized InAs/GaAs quantum dots (QDs) using an adjacent two‐dimensional hole gas (2DHG) as detector for temperatures up to 77 K. capacitance‐voltage (C‐V) measurements as well as time‐resolved current measurements in the 2DHG resolve a structure of six distinct peaks which are related to the many‐particle hole states in the QD ensemble. The time constants of the capture and emission processes for each individual many‐particle hole state are extracted and the underlying emission processes are identified. An equivalent circuit model yields the gate voltage depedent lever‐arm and the level‐splittings of the many‐particle hole states. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)