Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
复制标题
使用 X 射线衍射测定外延 GaN 层中束状螺纹位错的密度
DOI：
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
D. Rafaja
中科院分区：
文献类型：
--
作者：
M. Barchuk;V. Holý;D. Rafaja
X 射线衍射是用于确定位错密度的最流行的实验方法之一，因为它可以识别位错产生的应变场和局部晶格旋转。位错密度定量分析的主要挑战是建立合适的微观结构模型，该模型可靠地描述位错排列和相邻位错应变场之间相互作用的影响，以便能够精确确定位错密度。本研究的目的是证明 X 射线衍射和两种计算方法的能力，在部分束状螺纹位错的特殊情况下，这两种方法经常用于通过 X 射线衍射测量量化螺纹位错密度。第一种方法是基于位错控制晶体镶嵌性的分析，另一种方法是基于穿透衍射的漫 X 射线散射分析。
X-ray diffraction is one of the most popular experimental methods employed for determination of dislocation densities, as it can recognize both the strain fields and the local lattice rotations produced by dislocations. The main challenge of the quantitative analysis of the dislocation density is the formulation of a suitable microstructure model, which describes the dislocation arrangement and the effect of the interactions between the strain fields from neighboring dislocations reliably in order to be able to determine the dislocation densities precisely. The aim of this study is to prove the capability of X-ray diffraction and two computational methods, which are frequently used for quantification of the threading dislocation densities from X-ray diffraction measurements, in the special case of partially bunched threading dislocations. The first method is based on the analysis of the dislocation-controlled crystal mosaicity, and the other one on the analysis of diffuse X-ray scattering from threading d...
DOI：
10.1107/s2053273314011139
发表时间：
2014
期刊：
Acta crystallographica. Section A, Foundations and advances
影响因子：
--
作者：
V. M. Kaganer;K. K. Sabelfeld
通讯作者：
K. K. Sabelfeld
分子束外延生长GaN(0001)薄膜的倒易空间图分析
影响因子：
6.1
作者：
V. S. Kopp;V. M. Kaganer;B. Jenichen;O. Brandt
通讯作者：
O. Brandt