Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy
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时间分辨吸收光谱研究InGaN薄膜中电子自旋的注入和弛豫

DOI：
10.7498/aps.57.3853
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发表时间：
2008-06
期刊：
物理学报
影响因子：
--
通讯作者：
Chen Xiao-Xue
Chen Xiao-Xue
中科院分区：
其他
文献类型：
--
作者：
Liu Xiao-Dong;Wen Jin-Hui;Huang Qi-Wen;Lai Tian-Shu;Lin Wei-Zhu;Teng Li-Hua;Chen Xiao-Xue

文献摘要

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用飞秒时间分辨圆偏振泵浦探测光谱研究了In0.1Ga0.9N薄膜中电子自旋的注入和驰豫。得到了0~2的初始自旋极化度，与Heavy的3：1的比例一致
The injection and relaxation of electron spins in In 0.1 Ga 0.9 N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy