Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review
Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review
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位错在金刚石异质外延生长中的多重作用：简要回顾
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发表时间：
2016
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通讯作者：
B.
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作者：
M. Schreck;M. Mayr;O. Klein;M. Fischer;S. Gsell;A. Sartori;B.
在具有明显晶格失配的外延异质结构的合成中，位错是一种重要的线缺陷。由于它们的存在通常会降低器件质量，通过优化的生长策略来最小化位错密度是研发的关键挑战，这对晶格常数相差超过7%的Ir上金刚石系统也是如此。由于这种失配，初始位错密度非常高。在这篇综述中，我们讨论了异质外延金刚石生长中位错的不同方面。它们不同于有效降低密度的相互作用机制、与表面结构的相互作用、它们在形成本征应力中的关键作用、它们可能在形成高度各向异性应力中的作用以及它们作为硼杂质偏析的汇的作用。最后指出，位错介导的应力形成可以通过形成压应力表面层来有意地用于强化器件。本文主要介绍作者课题组的最新研究成果。
In the synthesis of epitaxial heterostructures with appreciable lattice misfit, dislocations represent a crucial linear defect. Since device quality is typically deteriorated by their presence, minimizing the dislocation density by optimized growth strategies is a key challenge for R&D. This especially holds also for the system diamond‐on‐iridium with its difference in lattice constants of more than 7%. As a consequence of this misfit, the initial dislocation density is very high. In this review we discuss different aspects of dislocations in heteroepitaxial diamond growth. They vary from mutual interaction mechanisms for an efficient reduction in density, over interaction with surface structures, their crucial role in the formation of intrinsic stress, their presumable role in formation of highly anisotropic stress and also their role as sink for the segregation of boron dopants. Finally, it is pointed out that the dislocation mediated stress formation may be used intentionally to strengthen devices by formation of compressively stressed surface layers. The present article is focused on recent studies from the authors’ research group.