Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores
Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores
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DOI：
10.1063/1.4913588
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发表时间：
2015-02
影响因子：
4
通讯作者：
F. Zhuge;Jun Li;Hao Chen;Jun Wang;L. Zhu;B. Bian;Bing Fu;Qin Wang;Le Li-;Ruobing Pan
中科院分区：
文献类型：
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作者：
F. Zhuge;Jun Li;Hao Chen;Jun Wang;L. Zhu;B. Bian;Bing Fu;Qin Wang;Le Li-;Ruobing Pan
在这封信中，我们报告的电阻开关起源于断裂/再生的单晶铜细丝在氮掺杂的多孔碳基忆阻器件Cu/CN 0. 15/Pt。在CN 0.15薄膜中，Cu细丝被限制在锥形纳米孔中。Cu丝中存在位错，导致明显的晶格畸变。Cu/CN 0.15/Pt器件在导通和截止状态下均表现出优异的高温保持性能，表明其在电阻存储器应用中具有良好的前景。此外，Cu/CN 0.15/Pt还可以实现连续的开关过程（ON-to-OFF switching）和SET过程（OFF-to-ON switching），显示了自适应学习能力，在突触器件中具有潜在的应用价值。
In this letter, we report on the resistive switching originating from the rupture/rejuvenation of single-crystalline Cu filaments in a nitrogen-doped porous carbon-based memristive device Cu/CN0.15/Pt. Cu filaments are confined in conical nanopores in CN0.15 thin films. Dislocations exist in the Cu filaments, resulting in obvious crystal lattice distortions. The Cu/CN0.15/Pt device shows outstanding high temperature retention performance for both ON and OFF states, indicating that it is promising for resistance memory applications. Furthermore, continuous RESET (ON-to-OFF switching) and SET (OFF-to-ON switching) processes could be realized indicating the adaptive learning ability of Cu/CN0.15/Pt, which has potential applications in synaptic devices.