Triplet exciton confinement in phosphorescent polymer light-emitting diodes
Triplet exciton confinement in phosphorescent polymer light-emitting diodes
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DOI：
10.1063/1.1544658
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发表时间：
2003-02-17
影响因子：
4
通讯作者：
Yang, Y
中科院分区：
文献类型：
--
作者：
Chen, FC;He, GF;Yang, Y
一系列铱配合物，其三重态能级高于或低于主体聚合物的三重态能级，被用来研究激子在主体和掺杂剂之间的流动。磷光聚合物发光二极管的性能已被证明对掺杂剂的三重态能量敏感。当掺杂剂的激子能级高于主体聚合物的激子能级时，发生"反向激发能量转移"，因此，光致发光被猝灭，器件性能变差。当掺杂剂的三重态能级低于主体聚合物的三重态能级时，激子被限制在掺杂剂位点，并且由于这种限制，器件显示出更好的性能。(C)2003年，美国物理学会。
A series of iridium complexes, with triplet energy levels above or below the triplet level of host polymer, were used to study the flow of excitons between the host and the dopants. The performance of phosphorescent polymer light-emitting diodes has been shown to be sensitive to the triplet energy of the dopant. When the dopant exciton level was higher than that of the host polymer, a "backward excitation energy transfer" occurred; hence, the photoluminescence is quenched and the device performance is poor. When the triplet energy level of the dopant was lower than that of the host polymer, the exciton is confined to the dopant site, and the device shows better performance due to this confinement. (C) 2003 American Institute of Physics.