First result from x-ray pulse height analyzer with radial scanning system for LHD
First result from x-ray pulse height analyzer with radial scanning system for LHD
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带有 LHD 径向扫描系统的 X 射线脉冲高度分析仪的第一个结果
DOI：
10.1063/1.1324746
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发表时间：
2001
影响因子：
1.6
通讯作者：
S. Morita
中科院分区：
文献类型：
--
作者：
S. Muto;S. Morita
利用X射线脉冲高度分析器在大螺旋线装置上的组装，成功地获得了X射线谱的径向轮廓。用ICRF和中性束注入（NBI）加热等离子体，得到了观察到的等离子体轮廓。作为探测器，Si（Li）半导体与直方图存储器和模数转换器（ADC）一起使用，基本上以高达500 kcps的高计数率工作。在常规运行中，计数率一般为62kcps，铁Kα线能量分辨率优于400eV。该组件配备有四个探测器和一个径向扫描系统，该系统在主半径方向上调制探测器的视线。在几厘米的空间分辨率下获得了电子温度和金属杂质强度的分布。测量的电子温度与汤姆逊散射的结果吻合得很好。该系统适用于稳态放电。本文还介绍了该装置的设计思想和最近的性能测试结果，并在大型螺旋装置上成功地获得了X射线谱的径向分布。用ICRF和中性束注入（NBI）加热等离子体，得到了观察到的等离子体轮廓。作为探测器，Si（Li）半导体与直方图存储器和模数转换器（ADC）一起使用，基本上以高达500 kcps的高计数率工作。在常规运行中，计数率一般为62kcps，铁Kα线能量分辨率优于400eV。该组件配备有四个探测器和一个径向扫描系统，该系统在主半径方向上调制探测器的视线。在几厘米的空间分辨率下获得了电子温度和金属杂质强度的分布。测量的电子温度与汤姆逊散射的结果吻合得很好。该系统适用于稳态放电。该组件的设计理念和最近的结果…
Radial profiles of x-ray spectrum have been successfully obtained using an assembly of x-ray pulse height analyzer in large helical device. The observed profile is obtained from plasma heated by ICRF and neutral beam injection (NBI). As a detector, Si(Li) semiconductor is used with a histogramming memory and analog-to-digital converter (ADC) basically working at high counting rate up to 500 kcps. In routine operation a count rate of 62 kcps has been normally obtained with energy resolution better than 400 eV at iron Kα line. The assembly is equipped with four detectors and a radial scanning system which modulates sight lines of the detectors in major radius direction. The profiles of electron temperature and the intensity of metallic impurities have been obtained with a spatial resolution of a few centimeters. Measured electron temperature is in good agreement with that from Thomson scattering. The system is applicable to steady-state discharge. The design philosophy of the assembly and recent results on the performance tests are also presented.Radial profiles of x-ray spectrum have been successfully obtained using an assembly of x-ray pulse height analyzer in large helical device. The observed profile is obtained from plasma heated by ICRF and neutral beam injection (NBI). As a detector, Si(Li) semiconductor is used with a histogramming memory and analog-to-digital converter (ADC) basically working at high counting rate up to 500 kcps. In routine operation a count rate of 62 kcps has been normally obtained with energy resolution better than 400 eV at iron Kα line. The assembly is equipped with four detectors and a radial scanning system which modulates sight lines of the detectors in major radius direction. The profiles of electron temperature and the intensity of metallic impurities have been obtained with a spatial resolution of a few centimeters. Measured electron temperature is in good agreement with that from Thomson scattering. The system is applicable to steady-state discharge. The design philosophy of the assembly and recent results on ...