New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy
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DOI：
10.1143/jjap.44.l1161
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发表时间：
2005-09
影响因子：
1.5
通讯作者：
G. Feng;M. Yoshimoto;K. Oe;A. Chayahara;Y. Horino
中科院分区：
文献类型：
--
作者：
G. Feng;M. Yoshimoto;K. Oe;A. Chayahara;Y. Horino
采用分子束外延（MBE）法制备了一种新型含铋III-V型半导体InGaAsBi合金。x射线衍射测量证实了具有光滑界面的InGaAsBi薄膜的高结晶质量。根据卢瑟福背散射（RBS）结果，在薄膜中掺入高达2.5%的铋。RBS通道光谱清楚地证明了Bi原子被取代地定位在InGaAs锌-闪锌矿晶格位上。
A new Bi-containing III–V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.