Facile mechanochemical synthesis of nano SnO2/graphene composite from coarse metallic Sn and graphite oxide: an outstanding anode material for lithium-ion batteries.

Facile mechanochemical synthesis of nano SnO2/graphene composite from coarse metallic Sn and graphite oxide: an outstanding anode material for lithium-ion batteries.
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DOI:
10.1002/chem.201304720
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发表时间:
2014-04
期刊:
影响因子:
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通讯作者:
F. Ye;Bote Zhao;R. Ran;Zongping Shao
F. Ye;Bote Zhao;R. Ran;Zongping Shao
中科院分区:
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文献类型:
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作者:
F. Ye;Bote Zhao;R. Ran;Zongping Shao

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以粗金属Sn颗粒和廉价的氧化石墨(GO)为原料,采用一种简便的方法大规模合成了SnO 2/石墨烯复合材料。该方法使用简单的球磨来实现Sn颗粒和GO之间的机械化学反应。反应后,尺寸为3-30 μm的初始粗Sn颗粒转化为SnO 2纳米晶体(约4 nm),而GO还原为石墨烯。采用X射线衍射、X射线光电子能谱、场发射扫描电子显微镜和透射电子显微镜研究了不同研磨时间(1 h 20 min、2 h 20 min和8 h 20 min,以下简称1、2或8 h)和原料配比(Sn:GO,1:2、1:1、2:1,w/w)下的复合材料。当研磨时间为8 h,原料比为1:1时,所制备的SnO 2/石墨烯复合材料形成由复合片组成的微米级结构片,振实密度高达1.53 g cm-3。通过使用这种复合材料作为LIB的阳极材料,即使在100 mA g(-1)下50次循环后也实现了891 mA h g(-1)的高比容量。
A facile method for the large-scale synthesis of SnO2 nanocrystal/graphene composites by using coarse metallic Sn particles and cheap graphite oxide (GO) as raw materials is demonstrated. This method uses simple ball milling to realize a mechanochemical reaction between Sn particles and GO. After the reaction, the initial coarse Sn particles with sizes of 3-30 μm are converted to SnO2 nanocrystals (approximately 4 nm) while GO is reduced to graphene. Composite with different grinding times (1 h 20 min, 2 h 20 min or 8 h 20 min, abbreviated to 1, 2 or 8 h below) and raw material ratios (Sn:GO, 1:2, 1:1, 2:1, w/w) are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and transmission electron microscopy. The as-prepared SnO2 /graphene composite with a grinding time of 8 h and raw material ratio of 1:1 forms micrometer-sized architected chips composed of composite sheets, and demonstrates a high tap density of 1.53 g cm(-3). By using such composites as anode material for LIBs, a high specific capacity of 891 mA h g(-1) is achieved even after 50 cycles at 100 mA g(-1).