A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs
A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs
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DOI：
10.1109/ted.2018.2864260
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发表时间：
2018-10-01
影响因子：
3.1
通讯作者：
Chowdhury, Srabanti
中科院分区：
文献类型：
--
作者：
Ji, Dong;Li, Wenwen;Chowdhury, Srabanti
比较了原位氧化物-氮化镓(OG-FET)与传统GaN金属氧化物-半导体FET(MOSFET)的开关性能，探讨了沟道电子迁移率对器件开关性能的影响。GaN OG-FET是一种新型结构，在栅氧化物和p-GaN之间生长了一层原始的GaN层，使沟道迁移率提高到185 cm(2)/V。S，比典型报告值(50 cm(2)/V)大3倍以上。S)在GaN MOSFET中。由于具有较高的沟道电子迁移率，GaN OG-FET的开关损耗比传统的GaN沟槽MOSFET低30%。我们的结果表明，GaN OG-FET有可能获得更高的效率，特别是在更高的频率下，这可能是一个兆赫范围转换的补丁。
This paper presents a comparison of switching performances between the in-situ oxide, gallium nitride (GaN) interlayer FET (OG-FET) and the conventional GaN metal-oxide-semiconductor FET (MOSFET), and explores the influence of the channel electron mobility on the device switching performance. GaN OG-FET is a novel structure with a pristine GaN layer grown between the gate oxide and the p-GaN enhancing the channel mobility up to 185 cm(2)/V . s, which is over 3 x larger than that of the typical reported value (50 cm(2)/V . s) in GaN MOSFET. Owing to the high channel electron mobility, the GaN OG-FET showed a switching loss 30% lower than that of the conventional GaN trench MOSFET. Our results indicate that GaN OG-FET has the potential to attain greater efficiency, particularly at higher frequencies, showing a possible patch toward megahertz range conversions.