Reflection z‐scan measurements of opaque semiconductor thin films
Reflection z‐scan measurements of opaque semiconductor thin films
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DOI：
10.1002/pssa.200406896
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发表时间：
2005-01
期刊：
影响因子：
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通讯作者：
R. Ganeev;A. Ryasnyansky
中科院分区：
文献类型：
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作者：
R. Ganeev;A. Ryasnyansky
利用反射z扫描技术(RZ扫描)研究了半导体薄膜(3As2S3/As2Se3和CdS)在532 nm波长下的非线性折射。计算得到3As_2S_3/As_2Se_3和CdS薄膜的非线性折射率γ分别为5×10~(-10)cm~2·W~(-1)和-5.2×10~(-11)cm~2·W~(-1)。在Kramers-Kronig变换的框架下讨论了这些硫族化合物的非线性折射符号。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
We studied the nonlinear refraction of semiconductor thin films (3As2S3/As2Se3 and CdS) at the wavelength of 532 nm using the reflection z‐scan technique (RZ‐scan). The values of nonlinear refractive indices γ of 3As2S3/As2Se3 and CdS were calculated to be 5 × 10–10 cm2 W–1 and –5.2 × 10–11 cm2 W–1. The comparison of RZ‐scans and transmission z‐scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers–Kronig transformations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)