Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide
Performance improvement of a ZnMgO ultraviolet detector by chemical treatment with hydrogen peroxide
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通过过氧化氢化学处理改进 ZnMgO 紫外探测器的性能
DOI：
10.1039/c7tc02425h
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发表时间：
2017
影响因子：
6.4
通讯作者：
Dezhen Shen
中科院分区：
文献类型：
--
作者：
Yongxue Zhu;Kewei Liu;Xiao Wang;Jialin Yang;Xing Chen;Xiuhua Xie;Binghui Li;Dezhen Shen
本文采用等离子体辅助分子束外延技术在a面蓝宝石衬底上制备了基于金属-半导体-金属结构的ZnMgO薄膜紫外探测器。研究了H2 O2溶液处理对ZnMgO薄膜及其紫外光探测器性能的影响。将ZnMgO紫外光探测器在100 ℃的H2 O2溶液中浸泡3 min后，器件的暗电流在1 V偏压下降低了一个数量级以上，而响应度略有下降。更有趣的是，响应速度变得更快，对大气不敏感的光电探测器与H2 O2溶液处理后，这可以归因于减少的氧空位缺陷。我们的研究结果可能为提高光电探测器的性能提供一种有前途的方法。
Herein, ZnMgO thin film ultraviolet (UV) photodetectors based on metal-semiconductor-metal structure were fabricated on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The effect of H2O2 solution treatment on the properties of the ZnMgO thin film and its UV photodetectors was investigated. After immersing the ZnMgO UV photodetector in a H2O2 solution at 100 degrees C for 3 min, the dark current of the device was reduced by more than one order of magnitude under 1 V bias, whereas the responsivity was slightly decreased. More interestingly, the response speed became much quicker and insensitive to the atmosphere after the treatment of the photodetector with H2O2 solution, which can be attributed to the reduction in the oxygen vacancy defects. Our findings may provide a promising approach for improving the performance of photodetectors.