Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses
Ultrafast carrier diffusion in gallium arsenide probed with picosecond acoustic pulses
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DOI：
10.1103/physrevb.64.081202
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发表时间：
2001-08-15
影响因子：
3.7
通讯作者：
Gusev, VE
中科院分区：
文献类型：
--
作者：
Wright, OB;Perrin, B;Gusev, VE
我们描述了利用超短光脉冲在GaAs薄板中产生和探测皮秒声-声子脉冲的实验研究。与一个简单的双极扩散理论的光学相位变化的比较表明，载流子扩散产生的声子脉冲的形状有显着的影响。的声子脉冲持续时间被测量为类似于25 ps，4倍以上的预期从光吸收的考虑单独，表明热载流子穿透超过100 nm的样品在声子脉冲产生过程中。
We describe an experimental investigation of the generation and detection of picosecond acoustic-phonon pulses in a thin slab of GaAs using ultrashort optical pulses. Comparison of the optical phase variation with a simple theory for ambipolar diffusion indicates that carrier diffusion has a significant effect on the shape of the phonon pulses generated. The phonon pulse duration is measured to be similar to 25 ps, four times longer than that expected from optical-absorption considerations alone, indicating that hot carriers penetrate more than 100 nm into the sample during the phonon pulse generation process.