Control of the Band-Edge Positions of Crystalline Si(111) by Surface Functionalization with 3,4,5-Trifluorophenylacetylenyl Moieties
Control of the Band-Edge Positions of Crystalline Si(111) by Surface Functionalization with 3,4,5-Trifluorophenylacetylenyl Moieties
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通过 3,4,5-三氟苯乙炔基部分的表面功能化控制晶体 Si(111) 的带边位置
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
N. Lewis
中科院分区：
文献类型：
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作者：
Noah T. Plymale;Anshul Ramachandran;Allison Lim;B. Brunschwig;N. Lewis
用有机部分对半导体表面进行官能化可以改变界面处的电荷分布、表面偶极子和电场。修改后的电场将移动半导体带边的位置相对于那些接触相。在半导体表面实现对能量学的化学控制有望提供一种调整带边能量学以形成具有所需材料的优化结的手段。用透射红外光谱、X射线光电子能谱和表面复合速度测量等方法对3，4，5-三氟苯基乙炔基（TFPA）修饰的Si（111）表面进行了表征。合成了甲基/四氢呋喃-四氢呋喃（MMTFPA）混合封端的n型和p型Si（111）表面，并用电化学方法对其进行了表征。电流密度-电压曲线和Mott-Schottky测量表明，势垒高度ΦB是电极表面单层覆盖率的函数。
Functionalization of semiconductor surfaces with organic moieties can change the charge distribution, surface dipole, and electric field at the interface. The modified electric field will shift the semiconductor band-edge positions relative to those of a contacting phase. Achieving chemical control over the energetics at semiconductor surfaces promises to provide a means of tuning the band-edge energetics to form optimized junctions with a desired material. Si(111) surfaces functionalized with 3,4,5-trifluorophenylacetylenyl (TFPA) groups were characterized by transmission infrared spectroscopy, X-ray photoelectron spectroscopy, and surface recombination velocity measurements. Mixed methyl/TFPA-terminated (MMTFPA) n- and p-type Si(111) surfaces were synthesized and characterized by electrochemical methods. Current density versus voltage and Mott–Schottky measurements of Si(111)–MMTFPA electrodes in contact with Hg indicated that the barrier height, Φb, was a function of the fractional monolayer coverage o...
影响因子：
32.5
作者：
McKone, James R.;Warren, Emily L.;Gray, Harry B.
通讯作者：
Gray, Harry B.