Biaxially aligned YBCO film tapes fabricated by all pulsed laser deposition
Biaxially aligned YBCO film tapes fabricated by all pulsed laser deposition
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DOI：
10.1016/s0964-1807(97)00035-5
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发表时间：
1996-10-01
期刊：
影响因子：
--
通讯作者：
Iwata, Y
中科院分区：
文献类型：
--
作者：
Hasegawa, K;Fujino, K;Iwata, Y
采用无离子束辅助的倾斜衬底沉积（ISD）技术，以0.5 μ m/min~（-1）的高沉积速率在镍基合金衬底上制备了双轴取向的氧化钇稳定氧化锆（YSZ）薄膜。通过对YSZ的微观结构的分析，研究了ISD法双轴取向生长的机理。柱状结构对等离子体羽建议在ISD过程中的自遮蔽效应。为了提高I-C值，YBCO厚度增加到5 μ m。在ISD生长的YSZ上实现了具有高J（c）值的YBCO厚膜。采用连续脉冲激光沉积技术成功地制备了具有双轴取向的YBCO长带，在75 cm的电压抽头间距下获得了37.0 A（77.3 K，0 T）的高I c值。(C)1998爱思唯尔科技有限公司版权所有。
Biaxially aligned yttria-stabilized zirconia (YSZ) films on Ni-based alloy substrates were realized with high deposition rate of 0.5 mum min(-1) by the inclined substrate deposition (ISD) technique without ion beam assistance. The microstructure of YSZ was examined to study the growth mechanism of biaxial alignment by ISD. Columnar structures toward the plasma plume suggested a self-shadowing effect in the ISD process. To raise I-c values, YBCO thickness was increased up to 5 mum. Thick YBCO films with high J(c) values were realized on the ISD-grown YSZ. Long YBCO tapes with biaxial alignment were successfully fabricated using continuous pulsed laser deposition and a high I-c value of 37.0 A (77.3 K, 0 T) at a 75 cm voltage tap spacing was achieved. (C) 1998 Elsevier Science Ltd. All rights reserved.