Self-Substrate-Triggered Technique to Enhance Turn-On Uniformity of Multi-Finger ESD Protection Devices
Self-Substrate-Triggered Technique to Enhance Turn-On Uniformity of Multi-Finger ESD Protection Devices
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DOI：
10.1109/vtsa.2005.1497063
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发表时间：
2005-04
影响因子：
5.4
通讯作者：
M. Ker;Jia-Huei Chen
中科院分区：
文献类型：
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作者：
M. Ker;Jia-Huei Chen
针对多指栅极接地nMOS （GGnMOS）的不均匀导通现象，提出了一种新的片内自基板触发技术。多指GGnMOS结构中的中指nMOS晶体管在ESD应力下总是先导通，因此其源端连接到其他寄生侧n-p-n双极晶体管（GGnMOS结构中的bjt）的基（衬底）端，形成自衬底触发设计。采用自基板触发技术，第一个开启的中指nMOS晶体管被用来触发其他晶体管。因此，可以同时触发GGnMOS的所有手指，以释放ESD电流。在0.13 μ m的CMOS工艺中，采用25 μ m的薄栅极氧化物进行了实验验证，结果表明，在不增加额外布局面积的情况下，采用自衬底触发技术可以大大提高GGnMOS的导通均匀性和ESD稳健性
A novel self-substrate-triggered technique for on-chip ESD protection design is proposed to solve the non-uniform turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The center-finger nMOS transistors in the multi-finger GGnMOS structure are always turned on first under ESD stress, so its source terminal is connected to the base (substrate) terminals of the other parasitic lateral n-p-n bipolar transistors (BJTs in the GGnMOS structure) to form the self-substrate-triggered design. With the proposed self-substrate-triggered technique, the first turned-on center-finger nMOS transistors are used to trigger on the others. Therefore, all fingers of GGnMOS can be triggered on simultaneously to discharge ESD current. From the experimental results verified in a 0.13-mum CMOS process with the thin gate oxide of 25 Aring, the turn-on uniformity and ESD robustness of the GGnMOS can be greatly improved without increasing extra layout area through the proposed self-substrate-triggered technique