Nanoscale Phenomena in Ferroelectric Thin Films
Nanoscale Phenomena in Ferroelectric Thin Films
复制标题
铁电薄膜中的纳米现象
DOI：
10.1080/10584580210862
复制
发表时间：
2002
影响因子：
0.7
通讯作者：
R. Ramesh
中科院分区：
文献类型：
--
作者：
V. Nagarajan;C. Ganpule;A. Roytburd;R. Ramesh
本文综述了我们课题组在薄膜铁电体领域的最新进展。具体重点是使用电压调制扫描力显微镜研究模型薄膜中的纳米级现象和弛豫动力学。使用这种技术，我们展示了锆钛酸铅 (PZT) 薄膜中偏振矢量的 3 维重建。其次，外延 PZT 铁电薄膜中剩余极化的时间依赖性弛豫已得到广泛研究，该薄膜包含 90° 域（薄膜平面中的 c 轴）的均匀二维网格。在弛豫过程中，90° 畴壁优先使 180° 反向畴成核。弛豫是通过反向 180° 域的成核和生长而发生的，随后随着弛豫时间的变化，这些域会合并并消耗整个区域。松弛动力学通过驱动力递减的 Johnson-Mehl-Avrami-Kolmogorov 方法进行建模。此外，我们还提出了在局部尺度上研究弛豫现象的结果，其中观察到了磁畴壁的钉扎和弯曲。
This paper reviews recent progress in our group in the area of thin film ferroelectrics. Specific focus is on nanoscale phenomena and relaxation dyanmics in model thin films using voltage modulated scanning force microscopy. Using this technique we show the 3 dimensional reconstruction of the polarization vector in lead zirconate titanate(PZT) thin films. Secondly the time dependent relaxation of remanant polarization in epitaxial PZT ferroelectric thin films, containing a uniform 2-dimensional grid of 90° domains ( c -axis in the plane of the film), has been investigated extensively. The 90° domain walls preferentially nucleate the 180° reverse domains during relaxation. Relaxation occurs through the nucleation and growth of reverse 180° domains, which subsequently coalesce and consume the entire region as a function of relaxation time. The kinetics of relaxation is modeled through the Johnson-Mehl-Avrami-Kolmogorov approach with a decreasing driving force. In addition we also present results on investigation of the relaxation phenomenon on a very local scale, where pinning and bowing of domain walls has been observed.