Studies of ohmic contact and schottky barriers on Au-Ge/GaAs and an-Ti/GaAs
Studies of ohmic contact and schottky barriers on Au-Ge/GaAs and an-Ti/GaAs
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发表时间：
2005
影响因子：
0.5
通讯作者：
R. Ghiţă;C. Logofatu;C. Negrila;A. Manea;M. Cernea;M. Lazarescu
中科院分区：
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作者：
R. Ghiţă;C. Logofatu;C. Negrila;A. Manea;M. Cernea;M. Lazarescu
砷化镓（GaAs）已日益成为一种重要的化合物半导体材料，适用于高速数字电路、微波和高能物理探测器。在掺Cr、（100）取向、ρ = 10 6 ~ 10 7 Ωcm的GaAs（半绝缘- S1）晶片上制作欧姆接触时，采用了Au-Ge合金接触。欧姆膜在高真空室（10 - 8托）中沉积在GaAs的等离子体蚀刻表面上，随后在低真空中在450°C下进行快速热退火（RTA）。对于整流接触的制造-分别肖特基二极管结构，我们使用相同的GaAs衬底。晶圆在标准清洁程序中脱脂，然后进行化学蚀刻。Au-Ti接触是通过真空热蒸发（10 - 6 ℃），然后在300-320 ℃下进行RTA工艺而沉积的。通过M/S界面的载流子输运机制强烈地受到半导体中的掺杂浓度和温度的影响。给出了所选样品在黑暗和光照条件下的I-V特性实验结果。Au-Ti/GaAs的肖特基势垒高度为0.7325 V，与n型和p型GaAs的平均值（0.5-0.8 V）雅阁。这项工作的目的是制造一个有竞争力的X射线探测器。
Gallium Arsenide (GaAs) has increasingly become an important compound-semiconductor material suited for high speed digital circuits, microwaves and detectors for high energy physics. For the fabrication of ohmic contacts on GaAs (semi-insulating- S1) wafers with characteristics as: Cr doped, (100) oriented, and ρ∼10 6 -10 7 Ωcm, has been used alloyed contact Au-Ge. The ohmic film was deposited in a high vacuum chamber (10 - 8 Torr), on a plasma etched surface of GaAs, followed by a rapid thermal annealing (RTA) at 450°C in low vacuum. For the fabrication of the rectifying contact- respectively the Schottky diode structure, we have used the same GaAs substrates. The wafers were degreased in a standard cleaning procedure, followed by a chemical etching. The Au-Ti contact has been deposited by thermal evaporation in vacuum (10 - 6 torr) followed by a RTA procedure at 300-320 °C. The carrier transport mechanisms through M/S interface are strongly influenced by the doping concentration in the semiconductor and temperature. There are presented the experimental I-V characteristics for selected samples in dark and illumination conditions. Schottky barriers height on Au-Ti/GaAs was 0.7325 V in accord with mean values on n and p type GaAs (0.5-0.8 V). The aim of this work is to fabricate a competitive X-ray detector.