Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC
Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC
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DOI：
10.1063/1.2179128
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发表时间：
2006-03
影响因子：
4
通讯作者：
J. Cantin;H. Bardeleben;Y. Ke;R. Devaty;W. J. Choyke
中科院分区：
文献类型：
--
作者：
J. Cantin;H. Bardeleben;Y. Ke;R. Devaty;W. J. Choyke
用电子顺磁共振（EPR）谱研究了生成气体和真空退火对3C-和4 H-SiC/SiO2界面上P-bC中心浓度的影响。我们的研究结果表明，在400摄氏度和850摄氏度以上的温度去钝化有效的钝化。两种多型体的离解能均为（4.3 +/- 0.3）eV。(c)2006年，美国物理学会。
The effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (P-bC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 degrees C and depassivation for temperatures above 850 degrees C. A dissociation energy of (4.3 +/- 0.3) eV has been determined for both polytypes. (c) 2006 American Institute of Physics.