Study on thermal stability of carbon-doped GaAs using novel metalorganic molecular beam epitaxial structures
Study on thermal stability of carbon-doped GaAs using novel metalorganic molecular beam epitaxial structures
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利用新型金属有机分子束外延结构研究碳掺杂GaAs的热稳定性
DOI：
10.1063/1.109541
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发表时间：
1993
影响因子：
4
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
S. Nozaki;Kiyoshi Takahashi;M. Shirahama;K. Nagao;J. Shirakashi;E. Tokumitsu;M. Konagai
使用金属有机分子束外延生长的两种新型碳掺杂结构来研究 650 至 800°C 温度范围内的热稳定性。每个结构由多个具有不同碳浓度的GaAs层组成，以同时表征具有不同碳浓度的GaAs层的热稳定性。即使在 800°C-240 分钟退火后，该结构也没有显示出明显的碳扩散。然而，两种结构中每个碳掺杂GaAs层的空穴浓度均有所降低，并且对于较高的碳浓度，空穴浓度的降低更为显着。随着退火时间或温度的增加，所有碳掺杂 GaAs 层的空穴浓度接近相同的值，低 1019 cm−3。
Two novel carbon‐doped structures grown by metalorganic molecular beam epitaxy were used to study thermal stability over the temperature range from 650 to 800 °C. Each structure consists of several GaAs layers with different carbon concentrations to characterize thermal stability of GaAs layers with various carbon concentrations simultaneously. The structure shows no significant carbon diffusion even after an 800 °C‐240 min anneal. However, the hole concentration of each carbon‐doped GaAs layer in both structures has decreased, and a decrease of the hole concentration is more significant for a higher carbon concentration. With increasing the annealing time or temperature, the hole concentrations of all carbon‐doped GaAs layers approach to the same value, low 1019 cm−3.