Electrostatically driven and capacitively detected differential lateral resonant pressure microsensor
Electrostatically driven and capacitively detected differential lateral resonant pressure microsensor
复制标题
静电驱动电容检测差分横向谐振压力微传感器
DOI：
10.1049/mnl.2013.0271
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发表时间：
2013-10-01
影响因子：
1.3
通讯作者：
Chen, Jian
中科院分区：
文献类型：
--
作者：
Jiao, Hailong;Xie, Bo;Chen, Jian
介绍了一种静电驱动电容检测式差动谐振压力微传感器的设计、制作和特性。差动结构由固定在膜片上的两个谐振器组成。响应于被测量的压力，膜片偏转增加一个谐振梁的固有谐振频率，并降低另一个谐振梁的谐振频率。差分频率输出减少了由应力和干扰引起的常见频率漂移，从而提高了传感器的稳定性。器件的几何形状进行了优化，使用数值模拟和制造工艺是基于绝缘体上硅晶片，只需要两个掩模与简化的微加工步骤（例如溅射，湿法蚀刻和深反应离子蚀刻）。在开环表征平台中对传感器进行量化，在真空（< 0.5 Pa）中产生高于10 430的品质因数。闭环测试结果记录了响应于所施加的压力的线性谐振频率偏移（线性相关性为0.9999），灵敏度为227 Hz/kPa。该谐振式压力微传感器制作工艺简单，性能可靠，可用于气象站和航空航天等各种场所的压力监测。
Presented is the design, fabrication and characterisation of an electrostatic-driving and capacitive-detection differential resonant pressure microsensor. The differential structure consists of two resonators immobilised on the diaphragm. In response to the pressure under measurement, the diaphragm deflection increases the intrinsic resonant frequency of one resonant beam and decreases the resonant frequency of the other. A differential frequency output reduces the common frequency drift caused by stresses and interferences, and thus improves the sensor's stability. The device geometries were optimised using numerical simulations and the fabrication process was based on a silicon-on-insulator wafer requiring only two masks with simplified microfabrication steps (e.g. sputter, wet etching and deep reactive ion etching). The sensor was quantified in an open-loop characterisation platform, producing a quality factor higher than 10 430 in vacuum ( < 0.5 Pa). Closed-loop test results recorded a linear resonant frequency shift (a linear correlation of 0.9999) in response to applied pressure, with a sensitivity of 227 Hz/kPa. This resonant pressure microsensor has a simple fabrication process and reliable performance, and can be used for pressure monitoring in various locations including weather stations and aerospace.