Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds.
Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds.
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DOI：
10.1021/ja020348p
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发表时间：
2002-11
影响因子：
15
通讯作者：
K. Raghavachari;Q. Fu;Gang Chen;Liang-Shi Li;Li Ch;Law Dc;Robert F. Hicks
中科院分区：
文献类型：
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作者：
K. Raghavachari;Q. Fu;Gang Chen;Liang-Shi Li;Li Ch;Law Dc;Robert F. Hicks
磷化铟 (001) 表面为研究氢对缺电子 IIIA 族元素铟的反应性提供了独特的化学环境。富 In δ(2 x 4) 重建上的氢吸附产生中性、共价结合的桥接氢化铟。使用振动光谱和从头算簇计算，识别出两种类型的桥接氢化物，即(mu-H)In(2)和(mu-H)(2)In(3)“蝴蝶状”结构。这些结构的形成是由于固态铟二聚体上氢原子吸附的巨大热力学驱动力。
The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich delta(2 x 4) reconstruction produced a neutral, covalently bound bridging indium hydride. Using vibrational spectroscopy and ab initio cluster calculations, two types of bridging hydrides were identified, a (mu-H)In(2) and a (mu-H)(2)In(3) "butterfly-like" structure. These structures were formed owing to the large thermodynamic driving force for adsorption of H atoms on solid-state indium dimers.