Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors
Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors
复制标题
基于自整流铁电忆阻器的超宽温电子突触
DOI：
10.1088/1361-6528/ab3c3d
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发表时间：
2019-09
期刊：
影响因子：
3.5
通讯作者：
Chu Jun Hao
中科院分区：
文献类型：
--
作者：
Yang Nan;Ren Zhong Qi;Hu Chuan Zhu;Guan Zhao;Tian Bo Bo;Zhong Ni;Xiang Ping-Hua;Duan Chun Gang;Chu Jun Hao
近年来，忆阻器作为下一代非易失性存储器、人工神经网络和类脑计算系统的有前途的构建模块得到了深入研究。然而，大多数忆阻器不能同时在极低和高温下工作，限制了它们在许多恶劣环境应用中的使用。在这里，我们证明基于高居里温度铁电体的忆阻器可以解决这些问题。基于 BiFeO3 (BFO) 的铁电忆阻器可以在超宽温度范围内实现出色的突触学习和记忆功能。电子传输和铁电特性之间的相关性是通过电阻和铁电开关的一致性以及局部电流和域分布的直接可视化来建立的。通过铁电极化反转来改变界面势垒会导致强大的电阻切换行为。 BFO铁电忆阻器在-170°C~300°C的极宽温度范围内实现了各种突触功能，包括长期增强/抑制、连续增强/抑制和尖峰时序依赖性可塑性，由于BFO在高温下具有强大的铁电性，甚至可以扩展到500°C。我们的研究结果表明，BFO 铁电忆阻器是极端或恶劣环境下超宽温电子突触的有希望的候选者。
Memristors have been intensively studied in recent years as promising building blocks for next-generation nonvolatile memory, artificial neural networks and brain-inspired computing systems. However, most memristors cannot simultaneously function in extremely low and high temperatures, limiting their use for many harsh environment applications. Here, we demonstrate that the memristors based on high-Curie temperature ferroelectrics can resolve these issues. Excellent synaptic learning and memory functions can be achieved in BiFeO3 (BFO)-based ferroelectric memristors in an ultra-wide temperature range. Correlation between electronic transport and ferroelectric properties is established by the coincidence of resistance and ferroelectricity switch and the direct visualization of local current and domain distributions. The interfacial barrier modification by the reversal of ferroelectric polarization leads to a robust resistance switching behavior. Various synaptic functions including long-term potentiation/depression, consecutive potentiation/depression and spike-timing dependent plasticity have been realized in the BFO ferroelectric memristors over an extremely wide temperature range of −170 °C ∼ 300 °C, which even can be extended to 500 °C due to the robust ferroelectricity of BFO at high temperatures. Our findings illustrate that the BFO ferroelectric memristors are promising candidates for ultra-wide temperature electronic synapse in extreme or harsh environments.
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影响因子：
3.2
作者：
BENCHORIN, M;MOLLER, F;KOCH, F
通讯作者：
KOCH, F
影响因子：
16.6
作者：
Boyn S;Grollier J;Lecerf G;Xu B;Locatelli N;Fusil S;Girod S;Carrétéro C;Garcia K;Xavier S;Tomas J;Bellaiche L;Bibes M;Barthélémy A;Saïghi S;Garcia V
通讯作者：
Garcia V
使用扫描探针显微镜区分铁电和非铁电机电效应
影响因子：
17.1
作者：
Balke, Nina;Maksymovych, Petro;Kalinin, Sergei V.
通讯作者：
Kalinin, Sergei V.
DOI：
10.4018/978-1-5225-9096-5.ch007
发表时间：
2021-07
期刊：
Smart Computational Intelligence in Biomedical and Health Informatics
影响因子：
--
作者：
A. Sinha;S. Gupta;Anurag Tiwari;Amrita Chaturvedi
通讯作者：
A. Sinha;S. Gupta;Anurag Tiwari;Amrita Chaturvedi
影响因子：
64.8
作者：
Bi, GQ;Poo, MM
通讯作者：
Poo, MM