High Switching-Speed Operation of Optical Memory Based on Polarization Bistable Vertical-Cavity Surface-Emitting Laser
High Switching-Speed Operation of Optical Memory Based on Polarization Bistable Vertical-Cavity Surface-Emitting Laser
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DOI：
10.1109/jqe.2010.2052590
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发表时间：
2010-11-01
影响因子：
2.5
通讯作者：
Kawaguchi, Hitoshi
中科院分区：
文献类型：
--
作者：
Sakaguchi, Jun;Katayama, Takeo;Kawaguchi, Hitoshi
研究了基于偏振双稳垂直腔面发射激光器(VCSEL)的全光缓冲存储器的工作条件。测量了980 nm偏振双稳垂直腔面发射激光器的开关功率与输入光信号频率失谐的关系。还测量了10-GB/S内存操作的合适操作条件，发现其处于负失谐一侧。基于双模速率方程模型的计算成功地解释了开关功率随频率失谐和工作条件的测量特性。存储器操作的最大数据速率强烈依赖于VCSEL的Q因数(即，光子寿命)。利用Q因子低至500的偏振双稳态垂直腔面发射激光器，实现了40 GB/S的存储操作。
Operation conditions of all-optical buffer memories based on polarization bistable vertical-cavity surface-emitting lasers (VCSELs) were investigated. The switching power dependence on the frequency detuning of the input optical signal was measured for a 980-nm polarization bistable VCSEL. The proper operating conditions for 10-Gb/s memory operation were also measured and found to be on the negative detuning side. Calculations based on a two-mode rate-equation model successfully explained the measured characteristics of the switching power dependence on the frequency detuning and the operating conditions. Maximum data rates for the memory operation strongly depended on the Q factor (i.e., photon lifetime) of the VCSELs. A possibility of 40-Gb/s memory operation using a polarization bistable VCSEL with a Q factor as low as 500 was shown.