Interstitial defects in silicon from 1–5 keV Si+ ion implantation
Interstitial defects in silicon from 1–5 keV Si+ ion implantation
复制标题
1–5 keV Si+ 离子注入产生的硅间隙缺陷
DOI：
--
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
Y. Erokhin
中科院分区：
文献类型：
--
作者：
A. Agarwal;T. E. Haynes;D. Eaglesham;H. Gossmann;D. Jacobson;J. Poate;Y. Erokhin
通过透射电子显微镜研究了5-、2-和1-keV Si+离子注入的扩展缺陷，注入剂量为1和3×1014 cm−2，退火温度为750至900 °C。尽管接近的表面，{311}型缺陷观察到，即使为1千电子伏。当过量元素的峰值浓度超过原子密度的0.1%时，样品中还含有一些{311}缺陷，这些缺陷在其宽度上呈波纹状。这些所谓的锯齿形{311}缺陷比普通的{311}缺陷更稳定，在750 °C下的溶解速率小十倍。由于其增强的稳定性，Z字形{311}缺陷生长到比其距表面的距离长许多倍的长度。有人提出，锯齿形{311}缺陷形成在退火的早期阶段，通过聚结的{311}缺陷的高体积密度限制在一个非常窄的注入层。这些结果表明，缺陷的形成和溶解将继续下去。
Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3×1014 cm−2 and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface, {311}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding ∼1% of the atomic density also contain some {311} defects which are corrugated across their width. These so-called zig-zag {311} defects are more stable than the ordinary {311} defects, having a dissolution rate at 750 °C which is ten times smaller. Due to their enhanced stability, the zig-zag {311} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {311} defects form during the early stages of annealing by coalescence the high volume density of {311} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to con...